C3M0065100K Datasheet | Specifications & PDF Download

C3M0065100K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (TAB) Features • C3MTM SiC MOSFET technology • Op

(28 views)

VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode

(24 views)