INCHANGE Semiconductor isc Product Specification .
LTC4371 - Dual Negative Voltage Ideal Diode-OR Controller/Monitor
Features nn Controls N-Channel MOSFETs to Replace Power Schottky Diodes nn Low 15mV Forward Voltage Minimizes Dissipation nn Withstands > ±300V Transi.2SC4371 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0μs(.C4371 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V.GC4371 - High Speed NIP Diodes
www.MICROSEMI.com ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.