C4371 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V

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www.MICROSEMI.com ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat

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Features nn Controls N-Channel MOSFETs to Replace Power Schottky Diodes nn Low 15mV Forward Voltage Minimizes Dissipation nn Withstands > ±300V Transi

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0μs(

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