C4D08120A Datasheet | Specifications & PDF Download

C4D08120A 4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C4D08120A ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 11 A 37 nC Z-Rec Rectifier Features Package •

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