C4D08120E ® Silicon Carbide Schottky Diode VRRM.
C4D08120E - Silicon Carbide Schottky Diode
C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package •.C4D08120E - 8A Silicon Carbide Schottky Diode
C4D08120E 1200 V, 8 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • High-frequency operation .