C50K Datasheet | Specifications & PDF Download

PD- 95235 IRG4PC50KDPbF • Lead-Free www.irf.com 1 05/04/04 http://www.Datasheet4U.com IRG4PC50KDPbF 2 www.irf.com http://www.Datasheet4U.com

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PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for mot

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PD - 95647 IRG4PC50KPbF INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT VCES = 600V Features • High short circuit rating optim

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PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q C Short Circuit Rated UltraFast IGBT VCES = 60

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ESTABLISHED RELIABILITY MIL-QUALIFIED METAL GLAZE™ RESISTOR ISO-9001 Registered RNC SERIES Spiraled or laser helixed to resistance value, toleranc

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge C

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PD - 91583B INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 12

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SC50A THRU SC50M 50 AMP SOZA CELL FEATURES ..High current capability ..Low forward voltage drop .. Low leakage current ..High surge current capabili

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