2SC5110 (Toshiba Semiconductor)
NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5110
2SC5110
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteri
(19 views)
MGFC5110 (Mitsubishi)
Ka-Band 3-Stage Self Bias Low Noise Amplifier
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5110
Ka
(14 views)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5110
2SC5110
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteri
(14 views)
TC511000Z-85 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
Th
(10 views)
TC511001AZ-70 (Toshiba)
DRAM
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(10 views)
TC511001AZ-80 (Toshiba)
DRAM
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(8 views)
TC511001AJ-70 (Toshiba)
DRAM
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(8 views)
TC511002Z-85 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(7 views)
TC511001AJ-10 (Toshiba)
DRAM
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(7 views)
TC511001Z-85 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12
(6 views)
TC511000J-10 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
Th
(6 views)
TC511001AP-80 (Toshiba)
DRAM
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(6 views)
TC511002P-12 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(6 views)
TC511002J-85 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(6 views)
TC511002Z-12 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(5 views)
TC511002Z-10 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(5 views)
TC511002J-12 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12
DESCRIPTION
Th
(5 views)
TC511001P-12 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12
(5 views)
TC511000P-85 (Toshiba)
DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
Th
(5 views)
TC511001AZ-10 (Toshiba)
DRAM
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(5 views)
