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TC514410Z-10 - DRAM
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isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·Minimum Lot-to-Lot variations for.DRC5144E - Silicon NPN epitaxial planar type
DRC5144E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5144E DRC2144E in SMini3 type package Features Low collector-e.