CED01N65 Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O

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