CEK01N65 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for

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www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for ext

Rating: 1 ★ (1 votes)