CEP16N10 Datasheet | Specifications & PDF Download

CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125m

Rating: 1 ★ (2 votes)

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design f

Rating: 1 ★ (2 votes)