CEP60N10/CEB60N10 N-Channel Enhancement Mode Field.
CEP60N10 - N-Channel MOSFET
CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for .CEP60N10V - N-Channel MOSFET
CEP60N10V/CEB60N10V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense .