N-Channel Enhancement Mode Field Effect Transistor.
Chino-Excel Technology
CES2302 - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design.
VBsemi
CES2302 - N-Channel MOSFET
CES2302-VB CES2302-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.
