CES2308 N-Channel Enhancement Mode Field Effect Tr.
Chino-Excel Technology
CES2308 - N-Channel MOSFET
CES2308 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell.
