
CES2310 - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.
Rating:
1
★
(4 votes)