CES2314 N-Channel Enhancement Mode Field Effect Tr.
Chino-Excel Technology
CES2314 - N-Channel MOSFET
CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. High dense cell de.
