CES2362 (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. High dense cell design fo
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N-Channel MOSFET
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