CED01N6/CEU01N6 N-Channel Enhancement Mode Field E.
CEU01N65 - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.CEU01N65A - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O.CEU01N6G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free .CEU01N6 - N-Channel MOSFET
CED01N6/CEU01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.