CEU16N10 Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell

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CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design f

Rating: 1 ★ (3 votes)