
CGHV1F006S (Cree)
GaN HEMT
CGHV1F006S
6 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed
(45 views)
CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Creeâ€.
GaN HEMT
GaN HEMT
CGHV1F006S Distributor