CS2 Datasheet | Specifications & PDF Download

High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC™ CS 20-25mo1F VDRM = VRRM = 2500 V IT(AV) = 18 A ITSM = 200 A Part number C

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TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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www.DataSheet4U.com CS2091 Series HIGH VOLTAGE POWER SUPPLIES y y y y y y y y FEATURES Made in America Compact Size Cost Effective Reliable Solid S

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ACS20MS April 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C T

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www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSh

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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0 R Spartan and Spartan-XL Families Field Programmable Gate Arrays 0 0 DS060 (v1.6) September 19, 2001 Product Specification • System level featur

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r TCS230 PROGRAMMABLE r COLOR LIGHT-TO-FREQUENCY CONVERTER TAOS046Q − JULY 2008 D High-Resolution Conversion of Light Intensity to Frequency D Progra

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8 Bit Microcontroller TLCS-870/C Series TMP86CS28DFG The information contained herein is subject to change without notice. 021023_D TOSHIBA is contin

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N N- CHANNEL MOSFET R JCS22N50FC MAIN CHARACTERISTICS ID 22 A VDSS 500 V Rdson-max（@Vgs=10V） 0.25Ω Qg-typ 47.59nC Package    UPS

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Silicon N-Channel Power MOSFET ○R CS28N50 ANR General Description： CS28N50 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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w w at .D w h S a t e e 2.0 AMP SCR 600 THRU 800 VOLTS 4U CS223-2M CS223-2N .c om Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL

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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package    LED  Crss ( 3.8pF)    dv/dt R

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N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 8.0 nC Package    LED APPLICATIONS  High

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UT54ACS273E Octal D-Flip-Flops with Clear March 2015 www.aeroflex.com/Logic Datasheet FEATURES • Contains eight flip-flops with single-rail outputs

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Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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