2SD1403 GENERAL DESCRIPTION Silicon Diffused Powe.
D1403 - 2SD1403
2SD1403 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.CD1403GS - 5-Dot RED/GREEN LED Level Meter
m o .c U 4 et 5-DoteRed/Green LED Level Meter h S U s e ta z Aa C level meters such as VU meters. D . z DC level meters such as signal meters. w w w F.MMBD1403ALT1G - Dual Series High Voltage Switching Diode
Dual Series High Voltage Switching Diode MMBD1401ALT1G, MMBD1403ALT1G Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen F.AD1403A - Low Cost/ Precision 2.5 V IC References
a FEATURES Improved, Lower Cost, Replacements for Standard 1403, 1403A 3-Terminal Device: Voltage In/Voltage Out Laser Trimmed to High Accuracy: 2.500.AD1403 - Low Cost/ Precision 2.5 V IC References
a FEATURES Improved, Lower Cost, Replacements for Standard 1403, 1403A 3-Terminal Device: Voltage In/Voltage Out Laser Trimmed to High Accuracy: 2.500.MMBD1403 - Small Signal Diodes
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes November 2014 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Small Signal Diodes 3 2 1 S.34HD1403 - Hybrid Stepper Motors
ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. 2.25in. ƶ2.36in. ƶ3.35in. 3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42mm) (ƶ56.4mm) (57.2mm) .MMBD1403 - Small Signal Diodes
Small Signal Diodes MMBD1401, MMBD1403, MMBD1404, MMBD1405 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) (Notes 1, 2) Rating Symbol .MMBD1403A - High Voltage General Purpose Diode
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode November 2014 MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A High-.2SD1403 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High spe.2SD1403 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performan.