D1403 Datasheet | Specifications & PDF Download

2SD1403 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated

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a FEATURES Improved, Lower Cost, Replacements for Standard 1403, 1403A 3-Terminal Device: Voltage In/Voltage Out Laser Trimmed to High Accuracy: 2.500

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a FEATURES Improved, Lower Cost, Replacements for Standard 1403, 1403A 3-Terminal Device: Voltage In/Voltage Out Laser Trimmed to High Accuracy: 2.500

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m o .c U 4 et 5-DoteRed/Green LED Level Meter h S U s e ta z Aa C level meters such as VU meters. D . z DC level meters such as signal meters. w w w F

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High spe

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Dual Series High Voltage Switching Diode MMBD1401ALT1G, MMBD1403ALT1G Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen F

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Small Signal Diodes MMBD1401, MMBD1403, MMBD1404, MMBD1405 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) (Notes 1, 2) Rating Symbol

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ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. ‡2.25in. ƶ2.36in. ƶ3.35in. ‡3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42mm) (ƶ56.4mm) (‡57.2mm)

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MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode November 2014 MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A High-

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performan

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MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes November 2014 MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Small Signal Diodes 3 2 1 S

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