D1664 Datasheet | Specifications & PDF Download

IS43/46LD16640C IS43/46LD32320C ® Long-term Support World Class Quality 1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM JULY 2021 FEATURES • Low-voltage Cor

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Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

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IS43/46LD16640A IS43/46LD32320A 1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1

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DATA SHEET MOS INTEGRATED CIRCUIT µPD16641 SOURCE DRIVER FOR 240-OUTPUT TFT-LCD (64 GRAY SCALES) DESCRIPTION The µPD16641 is a source driver for T

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SMD Type NPN Transistors 2SD1664-HF Transistors Features Low VCE(sat) Compliments to 2SB1132-HF ● Pb−Free Package May be Available. The G−Suffix De

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Semiconductor STD1664 NPN Silicon Transistor Description • Medium power amplifier application Features • PC(Collector dissipation)=2W(Ceramic subst

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Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Sui

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Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Sui

Rating: 1 ★ (3 votes)

IS43/46LD16640C IS43/46LD32320C ® Long-term Support World Class Quality 1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM JULY 2021 FEATURES • Low-voltage Cor

Rating: 1 ★ (3 votes)

IS43/46LD16640A IS43/46LD32320A 1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1

Rating: 1 ★ (2 votes)

DATA SHEET MOS INTEGRATED CIRCUIT µ PD16640C 300/309-OUTPUT TFT-LCD SOURCE DRIVER (64 GRAY SCALE) DESCRIPTION The µ PD16640C is a source driver fo

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UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1664 is an epitaxial planar typ

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www.DataSheet4U.com 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE FEATURES • Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module

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Transistors Medium Power Transistor(32V , 1A) 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC /I B = 500mA / 50mA) 2) Co

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2SD1664 Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 A NPN Silicon General Purpose Transistor Features SOT-89 E1 b1 1 L P

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Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Sui

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AiT Semiconductor Inc. www.ait-ic.com 2SD1664 GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR DESCRIPTION The 2SD1664 is av

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DATA SHEET MOS INTEGRATED CIRCUIT µ PD16647 402/384-OUTPUT TFT-LCD SOURCE DRIVER (64 GRAY SCALE) DESCRIPTION The µ PD16647 is a source driver for

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32V,1A Medium Power Silicon Transistor(NPN) 2SD1664 FEATURES : z Low saturation voltage:VCE(sat)=0.15V(typ.) (IC/iB=500mA/50mA) z PC=0.5W(Mounted on

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1664M3 BVCEO IC RCESAT Spec. No. : C223M3 Issued Date : 2003.05.26 Revised

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