D835 Datasheet | Specifications & PDF Download

ESMT AD83586B 2x40W Stereo / 1x 80W Mono / 2x20W+1x40W 2.1CH Digital Audio Amplifier with 20 Bands EQ Features  16/18/20/24-bits input with I2S, L

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Production specification Dual Schottky Rectifiers MBRD830-MBRD8100 FEATURES z High surge capacity. z For use in low voltage,high frequency Pb Lea

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ESMT AD83586C 2x60W Stereo / 1x120W Mono / 2x30W+1x60W 2.1CH Digital Audio Amplifier with 36 bands EQ and DRC Functions Features  16/18/20/24-bits

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Data Sheet FEATURES Simple: basic function is W = XY + Z Complete: minimal external components required Very fast: Settles to 0.1% of full scale (FS)

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Data Sheet FEATURES −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise in

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ESMT AD83584D 2x25W Stereo / 1x 50W Mono Digital Audio Amplifier With 20 bands EQ Functions, DRC and 2.1CH Mode Features z 16/18/20/24-bits input w

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FEATURES −3 dB bandwidth of 2.2 GHz (AV = 10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input

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Data Sheet FEATURES Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 5

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Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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ESMT/EMP Preliminary AD83586 2x25W Stereo / 1x 50W Mono / 2x15W+1x30W 2.1CH Digital Audio Amplifier with 20 Bands EQ Features z 16/18/20/24-bits in

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a Low Distortion 1.0 GHz Differential Amplifier FEATURES High Dynamic Range Output IP3: +28 dBm: Re 50 ⍀ @ 250 MHz Low Noise Figure: 5.9 dB @ 250 MH

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ESMT/EMP Preliminary AD83582 10Wx2 +20W 2.1CH Digital Audio Amplifier with EQ Functions and Sub-Woofer PWM out Features z 16/18/20/24-bits input wi

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MBRD835L 8A LOW VF SCHOTTKY BARRIER RECTIFIER NEW PRODUCT Features · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Eff

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ESMT Features z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)=

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Enhanced Product Low Distortion Differential RF/IF Amplifier AD8351-EP FEATURES −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single-resistor programmab

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Schottky Barrier Rectifier MBRD835 FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operat

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Silicon Step Recovery Diodes Features • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 ava

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Technical Data Data Sheet N0626, Rev. B MBRD835 SCHOTTKY RECTIFIER MBRD835 DPAK Circuit Diagram Maximum Ratings: Characteristics Peak Repetitive Rev

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