Fuji Semiconductor, Inc. - P.O. Box 702708 - Dalla.
AD83586B - 2.1CH Digital Audio Amplifier
ESMT AD83586B 2x40W Stereo / 1x 80W Mono / 2x20W+1x40W 2.1CH Digital Audio Amplifier with 20 Bands EQ Features 16/18/20/24-bits input with I2S, L.AD8353 - RF Gain Block
Data Sheet FEATURES Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 5.PSD835G2V - Flash PSD
PSD835G2V Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit + 256 Kbit dual Flash memories and 64 Kbit SRAM Features ■ Flash in-system programmable (ISP) .AD83586 - 2.1CH Digital Audio Amplifier
ESMT/EMP Preliminary AD83586 2x25W Stereo / 1x 50W Mono / 2x15W+1x30W 2.1CH Digital Audio Amplifier with 20 Bands EQ Features z 16/18/20/24-bits in.MBRD835L - SWITCHMODE Power Rectifier
Switch-mode Power Rectifier DPAK Surface Mount Package MBRD835L, SBRD8835L This switch−mode power rectifier which uses the Schottky Barrier principle .AD83584D - 2 x 25W Stereo / 1 x 50W Mono Digital Audio Amplifier
ESMT AD83584D 2x25W Stereo / 1x 50W Mono Digital Audio Amplifier With 20 bands EQ Functions, DRC and 2.1CH Mode Features z 16/18/20/24-bits input w.D835 - 2SD835
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com .ESD8351P2 - ESD Protection Diode
DATA SHEET www.onsemi.com ESD Protection Diode Low Capacitance ESD Protection Diode for High Speed Data Line ESD8351P2, SZESD8351P2 The ESD8351P2 ESD.AD835 - 4-Quadrant Multiplier
Data Sheet FEATURES Simple: basic function is W = XY + Z Complete: minimal external components required Very fast: Settles to 0.1% of full scale (FS) .AD8354 - RF Gain Block
Data Sheet FEATURES Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dBm Input/output internally matched to 5.D8355 - UPD8355
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.AD8351 - Low Distortion Differential RF/IF Amplifier
Data Sheet FEATURES −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise in.SZESD8351 - ESD Protection Diode
DATA SHEET www.onsemi.com ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Line ESD8351, SZESD8351 The ESD8351 Series E.MBRD835L - SWITCHMODE Power Rectifirers
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRD835L/D SWITCHMODE™ Power Rectifier DPAK Surface Mount Package This SWITCHMODE powe.AD8352 - 2 GHz Ultra Low Distortion Differential RF/IF Amplifier
FEATURES −3 dB bandwidth of 2.2 GHz (AV = 10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input .ESD8351 - ESD Protection Diode
DATA SHEET www.onsemi.com ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Line ESD8351, SZESD8351 The ESD8351 Series E.SBRD8350G - Power Rectifiers
MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G, SBRD8320G, SBRD8330G, SBRD8340G, SBRD8350G, SBRD8360G http://onsemi.com MBRD320, MBRD340 and MBRD3.AD8350 - Low Distortion 1.0 GHz Differential Amplifier
a Low Distortion 1.0 GHz Differential Amplifier FEATURES High Dynamic Range Output IP3: +28 dBm: Re 50 ⍀ @ 250 MHz Low Noise Figure: 5.9 dB @ 250 MH.MMD835-C11 - Silicon Step Recovery Diodes
Silicon Step Recovery Diodes Features • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 ava.MMD835-C11 - Silicon Step Recovery Diodes
Silicon Step Recovery Diodes Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. Th.