DB 25-005 … DB 25-16 Three-Phase Si-Bridge Recti.
FDB2532-F085 - N-Channel MOSFET
MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features • RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), V.FDB2532_F085 - N-Channel MOSFET
FDB2532_F085 N-Channel PowerTrench® MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID.ADB2504P - (ADB2504P - ADB2508P) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500P-1C ADB.ADB2506P - (ADB2504P - ADB2508P) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500P-1C ADB.ADB2508P - (ADB2504P - ADB2508P) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500P-1C ADB.DB25-08 - Three-Phase Si-Bridge Rectifiers
DB 25-005 … DB 25-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Pe.ADB2504 - (ADB2504 - ADB2508) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500-1C ADBD.ADB2506 - (ADB2504 - ADB2508) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500-1C ADBD.ADB2508 - (ADB2504 - ADB2508) 25 AMP SILICON BRIDGE RECTIFIERS
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-2500-1C ADBD.FDB2552_F085 - N-Channel MOSFET
FDB2552_F085 N-Channel PowerTrench® MOSFET FDB2552_F085 N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID.