DMG10N60SCT Datasheet | Specifications & PDF Download

Product Summary BVDSS 600V RDS(ON) 0.75Ω@VGS = 10V ID TC = +25°C 12A DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low Inp

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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