DMG4N60SCT Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V

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