DMN95H8D5HCTI Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor DMN95H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Static Drain-Sourc

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V

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