DN030 Datasheet | Specifications & PDF Download

Semiconductor DN030E NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/1

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Semiconductor DN030S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/1

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Semiconductor DN030U NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/1

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Semiconductor DN030 NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10

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