Diotec Semiconductor Datasheet | Specifications & PDF Download

DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Ma

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1N 4001 1N 4007, 1N 4007-1300 EM 513, EM 516, EM 518 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø 2.6 -0.1 1A 50…2000

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BZW 04-5V8 BZW 04-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer

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KYZ 25A05 KYZ 25A6 KYZ 25K05 KYZ 25K6 Silicon Press-Fit-Diodes Silizium-Einpreßdioden Nominal current – Nennstrom Repetitive peak reverse vol

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DAN 601 / DAP 601 (200 mW) Small Signal Diode Arrays Dioden Sätze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung Repetitive peak re

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DB 15-005 … DB 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Pe

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www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da

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KYW 35A05 KYW 35A6 KYW 35K05 KYW 35K6 Silicon Press-Fit-Diodes Silizium-Einpreßdioden Nominal current – Nennstrom Repetitive peak reverse vol

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GBI 25A GBI 25M Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 5.6 ±0.2 25 A 50…1000 V 32 ±0.2 ±0.2 Repe

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GBI 25A GBI 25M Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 5.6 ±0.2 25 A 50…1000 V 32 ±0.2 ±0.2 Repe

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1N 5400 K … 1N 5408 K Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø3 ±0.05 3A 50…1000 V DO-15 DO-204AC 0.4 g Repetitive p

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BZW 04-5V8 BZW 04-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer

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BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenm

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BC846 BC850 BC846 BC850 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 180/290/520 Tjmax = 150°C VCEO

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DAF 811 A/K … DAF 814 A/K (1.2 W) Fast Switching Rectifier Arrays Schnelle Gleichrichter Sätze Nominal power dissipation Nenn-Verlustleistung 23±0.2 4

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DB 15-005 … DB 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Pe

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DB 15-005 … DB 15-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Pe

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DB 35-005 … DB 35-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Pe

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DBI 25-005 DBI 25-16 Three-Phase Si-Bridge Rectifiers Dreiphasen-Si-Brückengleichrichter Nominal current – Nennstrom Repetitive peak reverse volta

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P4SMAJ5.0 P4SMAJ170CA P4SMAJ5.0 P4SMAJ170CA SMD Transient Voltage Suppressor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 400W PM(AV) = 1.0

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