
E4D20120D - Silicon Carbide Power MOSFET
E4D20120D
1200 V, 20 A Silicon Carbide Schottky Diode
Features
• 4th generation SiC merged PIN schottky technology • Zero reverse recovery current •
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E4D20120D 1200 V, 20 A Silicon Carbide Schottky D.
E4D20120D Distributor