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52 Hits
● RDS(ON)≦11.7mΩ@VGS=10V ● RDS(ON)≦18.2mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum ...
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50 Hits
include Battery temperature monitor, under-voltage lockout, automatic recharge and two status pins to indicate charge and charge termination.
Feature...
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37 Hits
• Attenuation: 0.5 dB steps to 31.5 dB
• Flexible parallel and serial programming
interfaces
• Unique power-up state selection • Positive CMOS contro...
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30 Hits
h the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 35A.
4The Power ...
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21 Hits
• Output voltage tolerance ≤ ±2% • Low-drop voltage • Integrated overtemperature protection • Reverse polarity protection • Input voltage up to 42 V •...
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21 Hits
● RDS(ON)≦60mΩ@VGS=-10V ● RDS(ON)≦90mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC...
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21 Hits
● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC c...
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20 Hits
• 2MHz unity gain bandwidth guaranteed • Supply voltage ±22V for SE4558 and ±18V for NE4558 • Short-circuit protection • No frequency compensation re...
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20 Hits
• Electrical features
- VCES = 6500 V - IC nom = 1000 A / ICRM = 2000 A - Low VCE,sat • Mechanical features - Extended storage temperature down to Tst...
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17 Hits
● VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
D G
S Schematic diagram
● High Power and current handing capability ● Le...
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16 Hits
● -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-res...
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