EB11 Datasheet | Specifications & PDF Download

CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.

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MCP47FEBXX 8-/10-/12-Bit Single/Dual Voltage Output Nonvolatile Digital-to-Analog Converters with I²C™ Interface Features • Operating Voltage Range:

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MCP48FEBXX 8-/10-/12-Bit Single/Dual Voltage Output Nonvolatile Digital-to-Analog Converters with SPI Interface Features • Operating Voltage Range:

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N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @

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CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1175 CEB1175 CEF1175 VDSS 650V 650V 650V RDS(ON) 1Ω 1Ω 1Ω

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page 1 2 3 EB11 sheet 100139a-a 100139a-b FP date 1939.01 1939.01 2000.02.04

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CEP1185/CEB1185 CEF1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP1185 CEB1185 CEF1185 VDSS 800V 800V 800V

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CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @V

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CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @

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REPLACEMENT TYPE :2SB1119 FEATURES  Low Collector-Emitter Saturation Voltage VCE(sat)  Satisfactory Operation Performances at High Efficiency with

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