EKG1020 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance :

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100V, 20A Low RDS(ON) N ch Trench Power MOSFET EKG1020, FKG1020 Data Sheet Features ● VDS ------------------------------------------------------ 100

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