40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power .
SANKEN
EKI04036 - N Channel Trench Power MOSFET
40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04036 Features V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ------.
INCHANGE
EKI04036 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : R.
