EP15 Datasheet | Specifications & PDF Download

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Low-Profile High Current Power Inductor CDEP15D90/T150 Description  Inductor for high withstand voltage (DC 120V) and large current  Magnetically s

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SMD Power Inductor CDEP159 RoHS Dimension - [mm] 15.0±0.5 0.4 15.0± 10.0 Max. 0.2 2-2.30± 9.0 5.0 5.7 Land pattern and Schematics - [mm] 5.4 4.

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http://www.ncepower.com Pb Free Product NCEP15T11JD NCE N-Channel Super Trench Power MOSFET Description The NCEP15T11JD uses Super Trench technology

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Low-Profile High Current Power Inductor CDEP15D90/T150 Description  Inductor for high withstand voltage (DC 120V) and large current  Magnetically s

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AC DC 8 36 Watts VEP Series • • • • • • • xppower.com Efficiency Efficiency Level V (24 W Level IV) CEC2008 & EISA 2007 Compliant IT & Medical Appr

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CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V. Super high dense c

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Specification for EP150AD60-1-0-0-DM BK00337 Final Final Version 1.0 Date 02.09.2010 Data Modul AG – Landsbergerstr. 322 – 80687 München – Tel. 089-56

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SMD Power Inductor CDEP159 RoHS Dimension - [mm] 15.0±0.5 0.4 15.0± 10.0 Max. 0.2 2-2.30± 9.0 5.0 5.7 Land pattern and Schematics - [mm] 5.4 4.

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SMD Power Inductor CDEP159 RoHS Dimension - [mm] 15.0±0.5 0.4 15.0± 10.0 Max. 0.2 2-2.30± 9.0 5.0 5.7 Land pattern and Schematics - [mm] 5.4 4.

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http://www.ncepower.com Pb Free Product NCEP1550G NCE N-Channel Super Trench Power MOSFET Description The NCEP1550G uses Super Trench technology th

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AC DC 8 36 Watts VEP Series • • • • • • • xppower.com Efficiency Efficiency Level V (24 W Level IV) CEC2008 & EISA 2007 Compliant IT & Medical Appr

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SMD Power Inductor CDEP159 RoHS Dimension - [mm] 15.0±0.5 0.4 15.0± 10.0 Max. 0.2 2-2.30± 9.0 5.0 5.7 Land pattern and Schematics - [mm] 5.4 4.

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http://www.ncepower.com NCEP1570GU NCE N-Channel Super Trench Power MOSFET Description The NCEP1570GU uses Super Trench technology that is uniquely

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