EU01 Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free

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EU01 ~ EU01A PRV : 200 ~ 600 Volts Io : 0.25 Ampere FAST RECOVERY RECTIFIER DIODES DO - 41 FEATURES : * High current capability * High surge current

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EU01 ~ EU01A PRV : 200 ~ 600 Volts Io : 0.25 Ampere FAST RECOVERY RECTIFIER DIODES DO - 41 FEATURES : * High current capability * High surge current

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VRM = 200 V, IF(AV) = 0.25 A, trr = 400 ns Fast Recovery Diode EU01Z Data Sheet Description The EU01Z is a fast recovery diode of 200 V / 0.25 A. Th

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CED01N6/CEU01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex

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VRM = 400 V, IF(AV) = 0.25 A, trr = 400 ns Fast Recovery Diode EU01 Data Sheet Description The EU01 is a fast recovery diode of 400 V / 0.25 A. The

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EU01 ~ EU01A PRV : 200 ~ 600 Volts Io : 0.25 Ampere FAST RECOVERY RECTIFIER DIODES DO - 41 FEATURES : * High current capability * High surge current

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O

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Product Specification AU OPTRONICS CORPORATION M170EU01 V0 ( V ) Preliminary Specification ( ) Final Specification Module Model Name 17.0” SXGA Colo

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Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Electri

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