EU2 Datasheet | Specifications & PDF Download

20V P-Channel MOSFETs PDEU2319X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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VRM = 200 V, IF(AV) = 1.0 A, trr = 400 ns Fast Recovery Diode EU2Z Data Sheet Description The EU2Z is a fast recovery diode of 200 V / 1.0 A. The ma

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20V P-Channel MOSFETs PDEU2319Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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www.eicsemi.com EU2 - EU2Z PRV : 200 - 600 Volts Io : 1.0 Ampere TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES DO

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20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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CED2182/CEU2182 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. Super hi

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20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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20V N-Channel MOSFETs PDEU2320Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. S

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Aluminum Electrolytic Capacitors (Large Can Type) Snap-In, 85°C TS-U ECE-S (U) Series: TS-U Aluminum Electrolytic Capacitors/TS-U s Features • Gener

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EIA Class 1 Temperature Compensating Disc Ceramic Capacitors { { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform

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VRM = 400 V, IF(AV) = 1.0 A, trr = 400 ns Fast Recovery Diode EU2 Data Sheet Description The EU2 is a fast recovery diode of 400 V / 1.0 A. The maxi

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VRM = 600 V, IF(AV) = 1.0 A, trr = 400 ns Fast Recovery Diode EU2A Data Sheet Description The EU2A is a fast recovery diode of 600 V / 1.0 A. The ma

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CED21A2/CEU21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super hi

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JIEJIE MICROELECTRONICS CO. , Ltd JEU2.8K4PL TVS Diode Array FEATURES  600 Watts peak pulse power per line (tP=8/20µs)  Protects two line pairs  L

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