Am29F800BB (AMD)
CMOS 5.0 Volt-only Sector Erase Flash Memory
PRELIMINARY
Am29F800BT/Am29F800BB
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s S
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AM29F016 (Advanced Micro Devices)
16-Megabit (2/097/152 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
FINAL
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 Volt ± 10% for read and
(70 views)
29LV160M (AMD)
16 Megabit 3 Volt-only Sector Erase Flash Memory
ADVANCE INFORMATION
Am29LV160M
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s
(48 views)
AM28F512 (Advanced Micro Devices)
512 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum acc
(46 views)
28F256 (Advanced Micro Devices)
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory
FINAL
Am28F256
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum acce
(45 views)
NMC27C256 (National Semiconductor)
UV Eraseable CMOS PROM
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(42 views)
NMC27C32 (National)
32768-Bit UV Eraseable CMOS PROM
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(41 views)
28F256 (STMicroelectronics)
256K(32K x8 / Chip Erase)FLASH MEMORY
(36 views)
N25Q032A (MICRON)
3V Multiple IO 4KB Sector Erase
32Mb, 3V, Multiple I/O Serial Flash Memory Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase N25Q032A Features
• • • • • • S
(35 views)
TDA1003A (Philips)
Motor Regulator and Bias/Erase Oscillator Circuit
(35 views)
M5M29GB320VP-80 (Renesas)
CMOS Block Erase Flash Memory
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Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT
(35 views)
NMC27C256C (National Semiconductor)
UV Eraseable CMOS PROM
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(34 views)
NMC27C2048 (National Semiconductor)
UV Eraseable CMOS PROM
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M5M29FB800FP-80 (Mitsubishi)
8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs
M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122
8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY
(33 views)
AT25PE16 (adesto)
16-Mbit DataFlash-L Page Erase Serial Flash Memory
AT25PE16
Features
16-Mbit DataFlash-L Page Erase Serial Flash Memory
DATASHEET
Single 2.3V - 3.6V supply
Serial Peripheral Interface (SPI) compatib
(33 views)
M5M29GB161BWG (Mitsubishi)
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION
The MITSUBISHI Mobile FL
(33 views)
M5M29FT800FP-12 (Mitsubishi)
8M-Bit BLOCK ERASE FLASH MEMORY
MITMSIUTSBUISBHISI HLISILsSIs
M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122
8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBY
(32 views)
ACTF4M32A (Aeroflex Circuit Technology)
ACT-F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module
ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module
Advanced
Features
www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) – Hard
(32 views)
M28F512 (STMicroelectronics)
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28F512
512K (64K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION
– Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE
(32 views)
M5M29GB320WG (Renesas)
CMOS Block Erase Flash Memory
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To all our customers
Regarding the change o
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