polyfet rf devices General Description Silicon VDM.
Taiwan Semiconductor
SF1003G - 10.0 AMPS. Glass Passivated Super Fast Rectifiers
SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliabilit.
LGE
SF1003G - 10.0AMP. Glass Passivated Super Fast Rectifiers
SF1001G-SF1008G 10.0AMP. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliability H.
Taiwan Semiconductor
SFAF1003G - Glass Passivated Super Fast Rectifiers
SFAF1001G - SFAF1008G 10.0AMPS. Isolated Glass Passivated Super Fast Rectifiers ITO-220AC Features UL Recognized File # E-326243 High efficiency,.
DACO
SFF1003 - SUPER FAST GLASS PASSIVATED RECTIFIERS
SFF10005 THUR SFF1006 SUPER FAST GLASS PASSIVATED RECTIFIERS Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly.
PIC
SF1003CT - SUPERFAST RECOVERY RECTIFIER
SF1001CT thru SF1007CT SUPERFAST RECOVERY RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 10 AMPERES TO-220AB FEATURES Low forward voltage drop High Cu.
YEASHIN
SF1003CT - RECTIFIER
SEMICONDUCTOR VOLTAGE RANGE 50 to 600 Volts 10.0 Amperes DATA SHEET SF1001CT~SF1007CT FEATURES • Low forward voltage drop • High current capability .
Compact Technology
UF1003G - ULTRA FAST GLASS PASSIVATED RECTIFIERS
ULTRA FAST GLASS PASSIVATED RECTIFIERS UF1001G thru UF1007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere FEATURES Glass passivate.
Compact Technology
UF1003 - ULTRA FAST RECTIFIERS
ULTRA FAST RECTIFIERS UF1001 thru UF1007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere FEATURES Diffused junction Ultra fast switc.
WON-TOP
UF1003F - 10A GLASS PASSIVATED ULTRAFAST RECTIFIER
® WON-TOP ELECTRONICS UF1000F – UF1008F 10A GLASS PASSIVATED ULTRAFAST RECTIFIER Pb Features Glass Passivated Die Construction Ultrafast 50nS an.
Polyfet RF Devices
F1003 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Agere Systems
TF1003C - LG1605DXB Limiting Amplifier
Data Sheet February 1999 LG1605DXB Limiting Amplifier Features s s s s s s s s s Digital video transmission Interface between 1319 receiver and LG16.
YZPST
PSTKPF1003S20 - HIGH POWER THYRISTOR
YANGZHOU POSITIONING TECH. CO., LTD HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Device Type PSTKPF1003S20 VRRM (1) 2000 VDRM (1) 2000 VRSM.
Ericsson
PTF10031 - 50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
PTF 10031 50 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier appl.
Ericsson
PTF10036 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10036 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for la.
