F1006 Datasheet | Specifications & PDF Download

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® WON-TOP ELECTRONICS UF1000 – UF1008 10A GLASS PASSIVATED ULTRAFAST RECTIFIER Pb Features  Glass Passivated Die Construction  Ultrafast 50nS and

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MOSPEC ULTRA-FAST GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere FEATURES Ultra-fast recovery time for high efficiency Gla

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UF1001 ~ UF1007 PRV : 50 ~ 1000 Volts Io : 1.0 Ampere ULTRA FAST RECTIFIER DIODES DO - 41 FEATURES : * High current capability * High surge current

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UF1000F THRU UF1008F ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES l Plastic package has Underwriters Labora

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UTF10005 THRU UTF1008 10A High Power Ultra Fast Rectifiers ■ Features • Low power loss, high efficiency. • High surge current capability. • Ultra fas

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SSF1006A Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =200A B

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® WON-TOP ELECTRONICS UF1000CT – UF1008CT 10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER Pb Features  Glass Passivated Die Construction  Ultrafast

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SF1001G THRU SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 10.0 Amperes Features Low forward voltag

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UF1000 THRU UF1008 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES l Plastic package has Underwriters Laborato

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www.DataSheet4U.com UFF10005 THUR UFF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS ITO-220AC 0.190(4.75) 0.415(10.54) Max 0.145(3.55) 0.128(3.25) D

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UF1001 THRU UF1007 ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE：50 TO 1000V CURRENT： 1.0A FEATURE Low power loss High surge capability Glass

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UGF1004GS thru UGF1008GS ® UGF1004GS thru UGF1008GS Pb Free Plating Product Pb 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Brid

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UGF1004G thru UGF1008G ® UGF1004G thru UGF1008G Pb Free Plating Product Pb 10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rect

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Main Product Characteristics: VDSS RDS(on) 100V 5mΩ (typ.) ID 200A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Specia

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UTF10005CT THRU UTF1008CT 10A High Power Ultra Fast Rectifiers ■ Features • Dual rectifier construction, positive centetap, offer 5.0A half wave and

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Main Product Characteristics: VDSS RDS(on) 100V 4.6mΩ (typ.) ID 200A ① Features and Benefits: TO220  Advanced MOSFET process technology  Speci

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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Dual High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005CT THRU ETF1010CT 10 Amperes High Power Super Fast Rectifiers V

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LITE-ON SEMICONDUCTOR ULTRA FAST RECTIFIERS FEATURES Low cost Diffused junction Ultra fast switching for high efficiency Low reverse leakage current L

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