| Part Number |
Description |
Manufacture |
PDF |
|
F100136 |
4-Stage Counter / Shift Register
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
|
F100124 |
Hex TTL-to-ECL Translator
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
|
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
Polyfet RF Devices
|
|
|
F1004 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
Polyfet RF Devices
|
|
|
F1000LC120 |
Extra Fast Recovery Diode
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
IXYS
|
|
|
F100164 |
16 Input Multiplexer
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
|
F100329 |
Low Power Octal ECL/TTL Bidirectional Translator with Register
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
|
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
Polyfet RF Devices
|
|
|
F100180 |
HIGH-SPEED 6-BIT ADDER
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
|
F100331 |
Low Power Triple D Flip-Flop
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Station |
National Semiconductor
|
|
