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F1006 Datasheet, Features, Application

F1006 RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDM.

Pan Jit International
rating-1 15

UF1006F - (UF1000F - UF1008F) ULTRAFAST SWITCHING RECTIFIER

UF1000F THRU UF1008F ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES l Plastic package has Underwriters Labora.
ETC
rating-1 13

UF-1006 - UF1006

.
Silikron
rating-1 10

SSF1006 - MOSFET

Main Product Characteristics: VDSS RDS(on) 100V 4.6mΩ (typ.) ID 200A ① Features and Benefits: TO220  Advanced MOSFET process technology  Speci.
JGD
rating-1 7

UGF1006G - Ultra Fast Rectifiers

Features * High efficiency, low VF * High current capability * High Reliability * High surge current capability * Compliant to RoHS Directive 2011/65/.
Silikron
rating-1 6

SSF1006A - MOSFET

SSF1006A Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =200A B.
Silikron
rating-1 6

SSF1006H - MOSFET

Main Product Characteristics: VDSS RDS(on) 100V 5mΩ (typ.) ID 200A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Specia.
Polyfet RF Devices
rating-1 5

F1006 - RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Taiwan Semiconductor Company
rating-1 5

SFF1006G - Super Fast Rectifier

SFF1001G – SFF1008G Taiwan Semiconductor 10A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● Hi.
Daco Semiconductor
rating-1 5

UFF1006 - (UFF10005 - UFF1006) Ultra Fast Glass Passivated Rectifiers

www.DataSheet4U.com UFF10005 THUR UFF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS ITO-220AC 0.190(4.75) 0.415(10.54) Max 0.145(3.55) 0.128(3.25) D.
Renesas
rating-1 5

R5F1006AASP - 16-Bit Single-Chip Microcontrollers

Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
DACO
rating-1 5

SFF1006 - SUPER FAST GLASS PASSIVATED RECTIFIERS

SFF10005 THUR SFF1006 SUPER FAST GLASS PASSIVATED RECTIFIERS Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly.
Pan Jit International
rating-1 4

UF1006 - (UF1000 - UF1008) ULTRAFAST SWITCHING RECTIFIER

UF1000 THRU UF1008 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES l Plastic package has Underwriters Laborato.
Diodes Incorporated
rating-1 4

UF1006 - (UF1001 - UF1007) 1.0A ULTRA-FAST RECTIFIER

UF1001 - UF1007 1.0A ULTRA-FAST RECTIFIER Features · · · · · · · Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability an.
Daco Semiconductor
rating-1 4

UFF1004 - (UFF10005 - UFF1006) Ultra Fast Glass Passivated Rectifiers

www.DataSheet4U.com UFF10005 THUR UFF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS ITO-220AC 0.190(4.75) 0.415(10.54) Max 0.145(3.55) 0.128(3.25) D.
Gaomi Xinghe Electronics
rating-1 4

SF1006 - (SF1001 - SF1007) VOLTAGE - 50 TO 600 VOLTS CURRENT - 10 AMPERES

ÐǺϵç×Ó SF1001 thru SF1007 XINGHE ELECTRONICS SUPERFAST RECOVERY RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 10 AMPERES FEATURES Low forward volt.
Taiwan Semiconductor
rating-1 4

SFF1006GA - (SFF1001GA - SFF1008GA) 10.0AMPS Isolated Glass Passivated Super Fast Rectifier

CREAT BY ART SFF1001GA - SFF1008GA 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Features — — — — — — High efficiency, low VF Hi.
TDK
rating-1 4

CLF10060NIT-471M-D - INDUCTORS

INDUCTORS Inductors for power circuits Wound ferrite CLF-NI-D series (for automotive) AEC-Q200 CLF10060NI-D type FEATURES Magnetic shield type wound i.
CITC
rating-1 3

UTF1006 - 10A High Power Ultra Fast Rectifiers

UTF10005 THRU UTF1008 10A High Power Ultra Fast Rectifiers ■ Features • Low power loss, high efficiency. • High surge current capability. • Ultra fas.
Ericsson
rating-1 3

PTF10065 - 30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor

PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier appl.
Fairchild Semiconductor
rating-1 3

FPF1005 - (FPF1005 / FPF1006) IntelliMAXTM Advanced Load Management Products

www.DataSheet4U.com FPF1005-FPF1006 IntelliMAXTM Advanced Load Management Products September 2006 FPF1005-FPF1006 IntelliMAXTM Advanced Load Manage.
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