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F1006 Datasheet | Specifications & PDF Download

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F1006 RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDM.

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SSF1006A - MOSFET

SSF1006A Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =200A B
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SSF1006 - MOSFET

Main Product Characteristics: VDSS RDS(on) 100V 4.6mΩ (typ.) ID 200A ① Features and Benefits: TO220  Advanced MOSFET process technology  Speci
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SSF1006H - MOSFET

Main Product Characteristics: VDSS RDS(on) 100V 5mΩ (typ.) ID 200A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Specia
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CLF10060NIT-1R5N-D - INDUCTORS

INDUCTORS Inductors for power circuits Wound ferrite CLF-NI-D series (for automotive) AEC-Q200 CLF10060NI-D type FEATURES Magnetic shield type wound i
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CLF10060NIT-470M-D - INDUCTORS

INDUCTORS Inductors for power circuits Wound ferrite CLF-NI-D series (for automotive) AEC-Q200 CLF10060NI-D type FEATURES Magnetic shield type wound i
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F1006 Distributor

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