F1015 Datasheet | Specifications & PDF Download

MURF1005 THRU MURF1060 SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere FEATURES Glass Passivate

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LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 150 to 200 Volts FORWARD CURRENT - 10 Amperes FEATURE

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MBR10150CT, MBRF10150CT Dual Common-Cathode High-Voltage Schottky Barrier Rectifiers Reverse Voltage 150 Volts Forward Current 10.0 Amperes Features G

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MBRF1035CT thru MBRF10200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Gua

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J B F HG SEMICONDUCTOR TECHNICAL DATA PF1015UDF16B ESD/EMI Filter APPLICATION I/O ESD protection for mobile handsets, notebook, PDAs, etc. EMI filt

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1015MA/D Microwave Pulse Power Transistors . . . designed for Class B a

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B F HG SEMICONDUCTOR TECHNICAL DATA PF1015UDF12B ESD/EMI Filtering APPLICATION I/O ESD protection for mobile handsets, notebook, PDAs, etc. EMI fil

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on e 3 ode K e Cathode 3 Schottky Barrier Rectifier MBRF10150CTL, 2x 5A, 150V, ITO-220AB, Common Cathode MBRF10150CTL RoHS Pb Description Littelf

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Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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MURF1005CT THRU MURF1060CT SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere FEATURES ● The plast

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These sta

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MURF1005CT THRU MURF1040CT PRV : 50 - 200 Volts Io : 10 Ampere FEATURES : * Ideally suited for free wheeling diode power factor correction application

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Production specification Schottky Barrier Rectifiers MBRF10150-MBRF10200 FEATURES z High Surge Capacity. Pb z For Use in Low Voltage,High Freque

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D Microwave Pulse Power Transistor . . . designed for 1025 – 1150

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www.DataSheet4U.com INDUTTANZE TIPO FUNGHETTO VERTICALI (RADIALI) PAG. 01 Øe 10.02.05 CODICE IF0305 IF0405 IF0507-02V IF0507-103V IF0507- V IF0707-

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MCC Features • • • • • MURF1005CT
     omponents 21201 Itasca Street Chatsworth  # $ % #

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MOSPEC Switchmode Full Plastic Dual Ultrafast Power Rectifiers …Designed for use in switching power supplies. inverters and as free wheeling diodes. T

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MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency -

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MBRF1040CT THRU MBRF10200CT 10A High Power Schottky Barrier Rectifiers ■ Features • Low power loss, high efficiency. • High current capability, low f

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CREAT BY ART MBRF10100D - MBRF10200D 10.0AMPS Isolated Schottky Barrier Rectifier ITO-220AB Features — Plastic material used carries Underwriters

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