F1015 Datasheet | Specifications & PDF Download

on e 3 ode K e Cathode 3 Schottky Barrier Rectifier MBRF10150CTL, 2x 5A, 150V, ITO-220AB, Common Cathode MBRF10150CTL RoHS Pb Description Littelf

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SRF10150CT THRU SRF10200CT 10 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * Hig

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SRAF1020 - SRAF10150 Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3

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SRAF1020 - SRAF10150 Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3

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MBRF10150CT_MBRF10200CT Dual Common-Cathode High-Voltage Schottky Rectifier Description The MBRF10150CT_MBRF10200CT is a N-channel enhancement-mod

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RoHS compliant 1A TMHRU 1A7 BRF1035 thru MBRF10200 ® Isolated 10.0 AMPS. Schottky Barrier Rectifiers Features Plastic material used carries Underw

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RoHS compliant SRF1020 thru SRF10150 SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 150 Volts Forward Current – 10 Amperes ® Features For surf

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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SRF10150 THRU SRF10200 10.0 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High

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SRF1020-SRF10150 Isolated 10.0AMP. Schottky Barrier Rectifiers ITO-220AB Features For surface mounted application Low power loss, high efficiency Hig

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These sta

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1015MA/D Microwave Pulse Power Transistors . . . designed for Class B a

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MOSPEC Switchmode Full Plastic Dual Ultrafast Power Rectifiers …Designed for use in switching power supplies. inverters and as free wheeling diodes. T

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Production specification Schottky Barrier Rectifiers MBRF10150-MBRF10200 FEATURES z High Surge Capacity. Pb z For Use in Low Voltage,High Freque

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MBRF1035CT - MBRF10150CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO - 220AB Features 10.2± 0.2 4.5± 0.2 3.1+-00..12 Plastic material use

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SEMICONDUCTOR TECHNICAL DATA MBRF10150CT SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATU

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse

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www.DataSheet4U.com INDUTTANZE TIPO FUNGHETTO VERTICALI (RADIALI) PAG. 01 Øe 10.02.05 CODICE IF0305 IF0405 IF0507-02V IF0507-103V IF0507- V IF0707-

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MBRF1035 thru MBRF10200 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring

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SANGDEST MICROELECTRONICS MBRF10150CT(CTR) Technical Data Green Products Data Sheet N0837, Rev. A MBRF10150CT (CTR) SCHOTTKY RECTIFIER Applicati

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