FCD850N80Z Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET October 2014 FCD850N80Z / FCU850N80Z N-Channel SuperFET® II MOSFET 800 V, 6 A, 850 m Featu

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