FDD3682 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDD3682 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Mi

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FDD3682-F085 N-Channel PowerTrench® MOSFET FDD3682-F085 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID

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FDD3682 FDD3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS =

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