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MP86945A Intelli-PhaseTM Solution with Integrated High-Side and Low-Side FETs and Driver DESCRIPTION The MP86945A is a monolithic half-bridge with bu

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www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

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Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►►Free from secondary breakdown ►►Low power drive

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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www.DataSheet4U.com DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature ■ ■ ■ ■ ■ ■ ■ ■ Excell

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Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

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4 -11 iupertex inc. VN1706 VN1710 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoas 170V 170V ROS(ON) (max

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease

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VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ►

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VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V 100V RDS(ON) (max) 0.35Ω 0.35Ω † MIL visual sc

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VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ►

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