.
Fairchild Semiconductor
6
FGD3245G2_F085 - N-Channel Ignition IGBT
FGD3245G2_F085 / FGB3245G2_F085 FGD3245G2_F085 / FGB3245G2_F085 EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT May 2014 Features SCIS Energy = 3.
ON Semiconductor
2
FGD3245G2-F085C - N-Channel IGBT
FGD3245G2-F085C EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Dri.
ON Semiconductor
2
FGD3245G2-F085V - N-Channel IGBT
FGD3245G2-F085V EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Dri.