FGH30S130P — 1300 V, 30 A Shorted-anode IGBT No.
Fairchild Semiconductor
10
FGH30S130P - IGBT
FGH30S130P — 1300 V, 30 A Shorted-anode IGBT November 2014 FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features • High Speed Switching • Low Saturat.
ON Semiconductor
7
FGH30S130P - IGBT
IGBT - Shorted-Anode 1300 V, 30 A FGH30S130P Description Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−ano.