FKP202 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance :

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N-Channel MOS FET FKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee March. 2007 ■Package---FM20 (TO22

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