FKP280A Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=280V(Min) ·Static Drain-Source On-Resistance :

(6 views)

N-Channel MOS FET FKP280A September, 2005 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Package---FM

(5 views)