FKV460 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FKV460S FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Res

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MOS FET FKV460S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS 40 V VGSS +20, –10 V ID ±60 A ID (pulse)* ±180 A PD 60 (

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MOS FET FKV460 (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 +20, –10 ± 60 ± 180

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MOS FET FKV460FP (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 ± 20 ± 60 ± 180 U

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