Fujitsu
FLL410IK-4C - L-Band High Power GaAs FET
L-Band High Power GaAs FET
FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7G
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